Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
2.7 A
Maximum Drain Source Voltage
150 V
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
95 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Typical Gate Charge @ Vgs
17 nC
Latime
4mm
Number of Elements per Chip
1
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Inaltime
1.55mm
Tara de origine
China
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,78
Buc. (Intr-un pachet de 5) (fara TVA)
€ 2,118
Buc. (Intr-un pachet de 5) (cu TVA)
5
€ 1,78
Buc. (Intr-un pachet de 5) (fara TVA)
€ 2,118
Buc. (Intr-un pachet de 5) (cu TVA)
5
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 45 | € 1,78 | € 8,90 |
50 - 120 | € 1,54 | € 7,70 |
125 - 245 | € 1,44 | € 7,20 |
250 - 495 | € 1,34 | € 6,70 |
500+ | € 1,25 | € 6,25 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
2.7 A
Maximum Drain Source Voltage
150 V
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
95 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Typical Gate Charge @ Vgs
17 nC
Latime
4mm
Number of Elements per Chip
1
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Inaltime
1.55mm
Tara de origine
China