Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
2.7 A
Maximum Drain Source Voltage
150 V
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
95 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
4mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Typical Gate Charge @ Vgs
17 nC
Inaltime
1.55mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
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€ 0,82
Buc. (Pe o rola de 2500) (fara TVA)
€ 0,976
Buc. (Pe o rola de 2500) (cu TVA)
2500
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
2.7 A
Maximum Drain Source Voltage
150 V
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
95 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
4mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Typical Gate Charge @ Vgs
17 nC
Inaltime
1.55mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V