Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
40 V
Tip pachet
SOIC
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.56 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
18.5 nC @ 5 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Latime
4mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
1.55mm
Detalii produs
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,96
Buc. (Livrat pe rola) (fara TVA)
€ 2,332
Buc. (Livrat pe rola) (cu TVA)
5
€ 1,96
Buc. (Livrat pe rola) (fara TVA)
€ 2,332
Buc. (Livrat pe rola) (cu TVA)
5
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
5 - 45 | € 1,96 | € 9,80 |
50 - 120 | € 1,78 | € 8,90 |
125 - 245 | € 1,59 | € 7,95 |
250 - 495 | € 1,48 | € 7,40 |
500+ | € 1,38 | € 6,90 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
40 V
Tip pachet
SOIC
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.56 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
18.5 nC @ 5 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Latime
4mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
1.55mm
Detalii produs