Documente tehnice
Specificatii
Marca
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.7 A, 6.8 A
Maximum Drain Source Voltage
40 V
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
42.5 mΩ, 62 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
3 W, 3.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Typical Gate Charge @ Vgs
11.7 nC @ 10 V, 25 nC @ 10 V
Latime
4mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.55mm
Tara de origine
China
Detalii produs
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,85
Buc. (Intr-un pachet de 20) (fara TVA)
€ 1,012
Buc. (Intr-un pachet de 20) (cu TVA)
20
€ 0,85
Buc. (Intr-un pachet de 20) (fara TVA)
€ 1,012
Buc. (Intr-un pachet de 20) (cu TVA)
20
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
20 - 180 | € 0,85 | € 17,00 |
200 - 480 | € 0,63 | € 12,60 |
500 - 980 | € 0,52 | € 10,40 |
1000 - 1980 | € 0,48 | € 9,60 |
2000+ | € 0,40 | € 8,00 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.7 A, 6.8 A
Maximum Drain Source Voltage
40 V
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
42.5 mΩ, 62 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
3 W, 3.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Typical Gate Charge @ Vgs
11.7 nC @ 10 V, 25 nC @ 10 V
Latime
4mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.55mm
Tara de origine
China
Detalii produs