Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
49 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
4.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Latime
4mm
Transistor Material
Si
Number of Elements per Chip
1
Inaltime
1.55mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,98
Buc. (Livrat pe rola) (fara TVA)
€ 1,166
Buc. (Livrat pe rola) (cu TVA)
20
€ 0,98
Buc. (Livrat pe rola) (fara TVA)
€ 1,166
Buc. (Livrat pe rola) (cu TVA)
20
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
20 - 80 | € 0,98 | € 19,60 |
100 - 180 | € 0,76 | € 15,20 |
200 - 480 | € 0,71 | € 14,20 |
500 - 980 | € 0,67 | € 13,40 |
1000+ | € 0,62 | € 12,40 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
49 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
4.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Latime
4mm
Transistor Material
Si
Number of Elements per Chip
1
Inaltime
1.55mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs