Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Typical Gate Charge @ Vgs
7.5 nC @ 10 V
Latime
4mm
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.55mm
Tara de origine
China
Detalii produs
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,59
Buc. (Livrat pe rola) (fara TVA)
€ 0,702
Buc. (Livrat pe rola) (cu TVA)
20
€ 0,59
Buc. (Livrat pe rola) (fara TVA)
€ 0,702
Buc. (Livrat pe rola) (cu TVA)
20
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
20 - 180 | € 0,59 | € 11,80 |
200 - 480 | € 0,45 | € 9,00 |
500 - 980 | € 0,42 | € 8,40 |
1000 - 1980 | € 0,36 | € 7,20 |
2000+ | € 0,30 | € 6,00 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Typical Gate Charge @ Vgs
7.5 nC @ 10 V
Latime
4mm
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.55mm
Tara de origine
China
Detalii produs