Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
9.9 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Latime
4mm
Typical Gate Charge @ Vgs
15.4 nC @ 10 V, 7.3 nC @ 4.5 V
Number of Elements per Chip
1
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.5mm
Tara de origine
China
Detalii produs
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,79
Buc. (Livrat pe rola) (fara TVA)
€ 0,94
Buc. (Livrat pe rola) (cu TVA)
10
€ 0,79
Buc. (Livrat pe rola) (fara TVA)
€ 0,94
Buc. (Livrat pe rola) (cu TVA)
10
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
10 - 90 | € 0,79 | € 7,90 |
100 - 240 | € 0,72 | € 7,20 |
250 - 490 | € 0,65 | € 6,50 |
500 - 990 | € 0,61 | € 6,10 |
1000+ | € 0,56 | € 5,60 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
9.9 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Latime
4mm
Typical Gate Charge @ Vgs
15.4 nC @ 10 V, 7.3 nC @ 4.5 V
Number of Elements per Chip
1
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.5mm
Tara de origine
China
Detalii produs