Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
12.7 A
Maximum Drain Source Voltage
25 V
Tip pachet
SOIC
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Latime
4mm
Transistor Material
Si
Typical Gate Charge @ Vgs
17.5 nC @ 4.5 V, 37 nC @ 10 V
Temperatura minima de lucru
-55 °C
Inaltime
1.55mm
Tara de origine
China
Detalii produs
N-Channel MOSFET, 8V to 25V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,27
Buc. (Intr-un pachet de 5) (fara TVA)
€ 1,511
Buc. (Intr-un pachet de 5) (cu TVA)
5
€ 1,27
Buc. (Intr-un pachet de 5) (fara TVA)
€ 1,511
Buc. (Intr-un pachet de 5) (cu TVA)
5
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 45 | € 1,27 | € 6,35 |
50 - 245 | € 1,15 | € 5,75 |
250 - 495 | € 1,03 | € 5,15 |
500 - 1245 | € 0,96 | € 4,80 |
1250+ | € 0,89 | € 4,45 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
12.7 A
Maximum Drain Source Voltage
25 V
Tip pachet
SOIC
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Latime
4mm
Transistor Material
Si
Typical Gate Charge @ Vgs
17.5 nC @ 4.5 V, 37 nC @ 10 V
Temperatura minima de lucru
-55 °C
Inaltime
1.55mm
Tara de origine
China
Detalii produs