Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
20 V
Tip pachet
TSOP-6
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
51 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
3.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Latime
1.7mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.1mm
Typical Gate Charge @ Vgs
34.8 nC @ -8 V
Inaltime
1mm
Dimensiune celula
TrenchFET
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Detalii produs
P-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,36
Buc. (Intr-un pachet de 25) (fara TVA)
€ 0,428
Buc. (Intr-un pachet de 25) (cu TVA)
25
€ 0,36
Buc. (Intr-un pachet de 25) (fara TVA)
€ 0,428
Buc. (Intr-un pachet de 25) (cu TVA)
25
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
25 - 225 | € 0,36 | € 9,00 |
250 - 600 | € 0,33 | € 8,25 |
625 - 1225 | € 0,30 | € 7,50 |
1250 - 2475 | € 0,27 | € 6,75 |
2500+ | € 0,25 | € 6,25 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
20 V
Tip pachet
TSOP-6
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
51 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
3.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Latime
1.7mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.1mm
Typical Gate Charge @ Vgs
34.8 nC @ -8 V
Inaltime
1mm
Dimensiune celula
TrenchFET
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Detalii produs