Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
20 V
Tip pachet
TSOP-6
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
51 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
3.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Latime
1.7mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.1mm
Typical Gate Charge @ Vgs
34.8 nC @ 8 V
Inaltime
1mm
Dimensiune celula
TrenchFET
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Detalii produs
P-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,19
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,226
Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 0,19
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,226
Buc. (Pe o rola de 3000) (cu TVA)
3000
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
3000 - 3000 | € 0,19 | € 570,00 |
6000+ | € 0,18 | € 540,00 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
20 V
Tip pachet
TSOP-6
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
51 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
3.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Latime
1.7mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.1mm
Typical Gate Charge @ Vgs
34.8 nC @ 8 V
Inaltime
1mm
Dimensiune celula
TrenchFET
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Detalii produs