Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
30 V
Tip pachet
TSOP
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
53 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
4.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.1mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Latime
1.7mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1mm
Tara de origine
China
Detalii produs
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
20
P.O.A.
20
Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
30 V
Tip pachet
TSOP
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
53 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
4.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.1mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Latime
1.7mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1mm
Tara de origine
China
Detalii produs