Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
5.9 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Latime
1.4mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
13.4 nC @ 10 V
Lungime
3.04mm
Temperatura maxima de lucru
+150 °C
Inaltime
1.02mm
Temperatura minima de lucru
-55 °C
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,16
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,19
Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 0,16
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,19
Buc. (Pe o rola de 3000) (cu TVA)
3000
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
3000 - 3000 | € 0,16 | € 480,00 |
6000+ | € 0,15 | € 450,00 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
5.9 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Latime
1.4mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
13.4 nC @ 10 V
Lungime
3.04mm
Temperatura maxima de lucru
+150 °C
Inaltime
1.02mm
Temperatura minima de lucru
-55 °C