Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
4.7 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
67.5 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Typical Gate Charge @ Vgs
23.8 nC @ 8 V
Latime
1.4mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-50 °C
Inaltime
1.02mm
Tara de origine
China
Detalii produs
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,32
Buc. (Livrat pe rola) (fara TVA)
€ 0,381
Buc. (Livrat pe rola) (cu TVA)
50
€ 0,32
Buc. (Livrat pe rola) (fara TVA)
€ 0,381
Buc. (Livrat pe rola) (cu TVA)
50
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
50 - 450 | € 0,32 | € 16,00 |
500 - 1200 | € 0,22 | € 11,00 |
1250 - 2450 | € 0,17 | € 8,50 |
2500 - 4950 | € 0,15 | € 7,50 |
5000+ | € 0,12 | € 6,00 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
4.7 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
67.5 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Typical Gate Charge @ Vgs
23.8 nC @ 8 V
Latime
1.4mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-50 °C
Inaltime
1.02mm
Tara de origine
China
Detalii produs