Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
5.6 A
Maximum Drain Source Voltage
40 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
51 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Typical Gate Charge @ Vgs
5.8 nC @ 10 V
Latime
1.4mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
1.02mm
Detalii produs
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,38
Buc. (Livrat pe rola) (fara TVA)
€ 0,452
Buc. (Livrat pe rola) (cu TVA)
20
€ 0,38
Buc. (Livrat pe rola) (fara TVA)
€ 0,452
Buc. (Livrat pe rola) (cu TVA)
20
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
20 - 180 | € 0,38 | € 7,60 |
200 - 480 | € 0,34 | € 6,80 |
500 - 980 | € 0,31 | € 6,20 |
1000 - 1980 | € 0,29 | € 5,80 |
2000+ | € 0,27 | € 5,40 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
5.6 A
Maximum Drain Source Voltage
40 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
51 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Typical Gate Charge @ Vgs
5.8 nC @ 10 V
Latime
1.4mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
1.02mm
Detalii produs