Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
1.2 A
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
345 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Latime
1.4mm
Typical Gate Charge @ Vgs
2.7 nC @ 4.5 V
Transistor Material
Si
Inaltime
1.02mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,50
Buc. (Livrat pe rola) (fara TVA)
€ 0,595
Buc. (Livrat pe rola) (cu TVA)
10
€ 0,50
Buc. (Livrat pe rola) (fara TVA)
€ 0,595
Buc. (Livrat pe rola) (cu TVA)
10
Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
1.2 A
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
345 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Latime
1.4mm
Typical Gate Charge @ Vgs
2.7 nC @ 4.5 V
Transistor Material
Si
Inaltime
1.02mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs