Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
2 nC @ 4.5 V, 4 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Latime
1.4mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
1.02mm
Detalii produs
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,38
Buc. (Livrat pe rola) (fara TVA)
€ 0,452
Buc. (Livrat pe rola) (cu TVA)
20
€ 0,38
Buc. (Livrat pe rola) (fara TVA)
€ 0,452
Buc. (Livrat pe rola) (cu TVA)
20
Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
2 nC @ 4.5 V, 4 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Latime
1.4mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
1.02mm
Detalii produs