Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.85V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
0.71 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Typical Gate Charge @ Vgs
3.5 nC
Latime
1.4mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Inaltime
1.02mm
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P.O.A.
25
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.85V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
0.71 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Typical Gate Charge @ Vgs
3.5 nC
Latime
1.4mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Inaltime
1.02mm