Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
2.3 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
112 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
860 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Typical Gate Charge @ Vgs
3.3 nC @ 2.5 V, 5.5 nC @ 4.5 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Latime
1.4mm
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.02mm
Tara de origine
China
Detalii produs
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,41
Buc. (Livrat pe rola) (fara TVA)
€ 0,488
Buc. (Livrat pe rola) (cu TVA)
20
€ 0,41
Buc. (Livrat pe rola) (fara TVA)
€ 0,488
Buc. (Livrat pe rola) (cu TVA)
20
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
20 - 180 | € 0,41 | € 8,20 |
200 - 480 | € 0,31 | € 6,20 |
500 - 980 | € 0,23 | € 4,60 |
1000 - 1980 | € 0,19 | € 3,80 |
2000+ | € 0,17 | € 3,40 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
2.3 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
112 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
860 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Typical Gate Charge @ Vgs
3.3 nC @ 2.5 V, 5.5 nC @ 4.5 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Latime
1.4mm
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.02mm
Tara de origine
China
Detalii produs