Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-363 (SC-70)
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
1.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
6.5 nC @ 4.5 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2mm
Latime
1.25mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1mm
Tara de origine
China
Detalii produs
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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P.O.A.
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P.O.A.
10
Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-363 (SC-70)
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
1.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
6.5 nC @ 4.5 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2mm
Latime
1.25mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1mm
Tara de origine
China
Detalii produs