Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-363
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
2.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.2mm
Typical Gate Charge @ Vgs
22 nC @ 8 V
Latime
1.35mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1mm
Tara de origine
China
Detalii produs
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,49
Buc. (Livrat pe rola) (fara TVA)
€ 0,583
Buc. (Livrat pe rola) (cu TVA)
20
€ 0,49
Buc. (Livrat pe rola) (fara TVA)
€ 0,583
Buc. (Livrat pe rola) (cu TVA)
20
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
20 - 180 | € 0,49 | € 9,80 |
200 - 480 | € 0,36 | € 7,20 |
500 - 980 | € 0,33 | € 6,60 |
1000 - 1980 | € 0,28 | € 5,60 |
2000+ | € 0,24 | € 4,80 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-363
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
2.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.2mm
Typical Gate Charge @ Vgs
22 nC @ 8 V
Latime
1.35mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1mm
Tara de origine
China
Detalii produs