Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
530 mA
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-523 (SC-89)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
762 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
220 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
1.7mm
Typical Gate Charge @ Vgs
1.8 nC @ 8 V
Latime
0.95mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
0.8mm
Detalii produs
N-Channel MOSFET, 8V to 25V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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P.O.A.
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P.O.A.
50
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
530 mA
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-523 (SC-89)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
762 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
220 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
1.7mm
Typical Gate Charge @ Vgs
1.8 nC @ 8 V
Latime
0.95mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
0.8mm
Detalii produs