Documente tehnice
Specificatii
Marca
VishayChannel Type
N, P
Maximum Continuous Drain Current
190 mA, 300 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SC-89-6
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
3 Ω, 8 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
250 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
1.7mm
Typical Gate Charge @ Vgs
1700 nC @ 15 V, 750 nC @ 4.5 V
Latime
1.7mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
0.6mm
Detalii produs
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,50
Buc. (Livrat pe rola) (fara TVA)
€ 0,595
Buc. (Livrat pe rola) (cu TVA)
20
€ 0,50
Buc. (Livrat pe rola) (fara TVA)
€ 0,595
Buc. (Livrat pe rola) (cu TVA)
20
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
20 - 180 | € 0,50 | € 10,00 |
200 - 480 | € 0,45 | € 9,00 |
500 - 980 | € 0,41 | € 8,20 |
1000 - 1980 | € 0,38 | € 7,60 |
2000+ | € 0,35 | € 7,00 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N, P
Maximum Continuous Drain Current
190 mA, 300 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SC-89-6
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
3 Ω, 8 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
250 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
1.7mm
Typical Gate Charge @ Vgs
1700 nC @ 15 V, 750 nC @ 4.5 V
Latime
1.7mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
0.6mm
Detalii produs