Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
1.8 A
Maximum Drain Source Voltage
400 V
Tip pachet
IPAK (TO-251)
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
7 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.73mm
Typical Gate Charge @ Vgs
13 nC @ 10 V
Latime
2.38mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
6.22mm
Detalii produs
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,14
Each (In a Tube of 75) (fara TVA)
€ 1,357
Each (In a Tube of 75) (cu TVA)
75
€ 1,14
Each (In a Tube of 75) (fara TVA)
€ 1,357
Each (In a Tube of 75) (cu TVA)
75
Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
1.8 A
Maximum Drain Source Voltage
400 V
Tip pachet
IPAK (TO-251)
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
7 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.73mm
Typical Gate Charge @ Vgs
13 nC @ 10 V
Latime
2.38mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
6.22mm
Detalii produs