Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
200 V
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.73mm
Transistor Material
Si
Latime
6.22mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
2.39mm
Detalii produs
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 2,48
Buc. (fara TVA)
€ 2,95
Buc. (cu TVA)
1
€ 2,48
Buc. (fara TVA)
€ 2,95
Buc. (cu TVA)
1
Cumpara in pachete mari
Cantitate | Pret unitar |
---|---|
1 - 9 | € 2,48 |
10 - 49 | € 2,03 |
50 - 99 | € 1,89 |
100 - 249 | € 1,76 |
250+ | € 1,63 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
200 V
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.73mm
Transistor Material
Si
Latime
6.22mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
2.39mm
Detalii produs