Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
2.7 A
Maximum Drain Source Voltage
250 V
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
6.73mm
Typical Gate Charge @ Vgs
14 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
2.38mm
Temperatura minima de lucru
-55 °C
Detalii produs
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 9,60
€ 0,96 Buc. (Intr-un pachet de 10) (fara TVA)
€ 11,62
€ 1,162 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
€ 9,60
€ 0,96 Buc. (Intr-un pachet de 10) (fara TVA)
€ 11,62
€ 1,162 Buc. (Intr-un pachet de 10) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
10
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 10 - 90 | € 0,96 | € 9,60 |
| 100 - 240 | € 0,91 | € 9,10 |
| 250 - 490 | € 0,80 | € 8,00 |
| 500 - 990 | € 0,75 | € 7,50 |
| 1000+ | € 0,63 | € 6,30 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
2.7 A
Maximum Drain Source Voltage
250 V
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
6.73mm
Typical Gate Charge @ Vgs
14 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
2.38mm
Temperatura minima de lucru
-55 °C
Detalii produs


