Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
200 V
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
1.5 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
6.22mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
6.73mm
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Inaltime
2.38mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
2V
Tara de origine
Malaysia
Detalii produs
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,44
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,524
Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 0,44
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,524
Buc. (Pe o rola de 3000) (cu TVA)
3000
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
200 V
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
1.5 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
6.22mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
6.73mm
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Inaltime
2.38mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
2V
Tara de origine
Malaysia
Detalii produs