Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
60 V
Tip pachet
TO-247AC
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
15.87mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Latime
5.31mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
20.82mm
Tara de origine
China
Detalii produs
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 6,68
Buc. (Intr-un pachet de 5) (fara TVA)
€ 7,949
Buc. (Intr-un pachet de 5) (cu TVA)
5
€ 6,68
Buc. (Intr-un pachet de 5) (fara TVA)
€ 7,949
Buc. (Intr-un pachet de 5) (cu TVA)
5
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 5 | € 6,68 | € 33,40 |
10 - 20 | € 5,53 | € 27,65 |
25 - 45 | € 5,10 | € 25,50 |
50 - 120 | € 4,73 | € 23,65 |
125+ | € 4,06 | € 20,30 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
60 V
Tip pachet
TO-247AC
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
15.87mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Latime
5.31mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
20.82mm
Tara de origine
China
Detalii produs