Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
2.7 A
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-223
Montare
Surface Mount
Numar pini
3+Tab
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
11 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.7mm
Latime
3.7mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.45mm
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Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
2.7 A
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-223
Montare
Surface Mount
Numar pini
3+Tab
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
11 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.7mm
Latime
3.7mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.45mm