Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
14 A
Maximum Drain Source Voltage
60 V
Tip pachet
TO-220FP
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
37 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Typical Gate Charge @ Vgs
25 nC @ 10 V
Inaltime
9.8mm
Temperatura minima de lucru
-55 °C
Tara de origine
China
Detalii produs
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 10,85
€ 2,17 Buc. (Intr-un pachet de 5) (fara TVA)
€ 13,13
€ 2,626 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 10,85
€ 2,17 Buc. (Intr-un pachet de 5) (fara TVA)
€ 13,13
€ 2,626 Buc. (Intr-un pachet de 5) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
5
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 5 - 45 | € 2,17 | € 10,85 |
| 50 - 120 | € 2,03 | € 10,15 |
| 125 - 245 | € 1,81 | € 9,05 |
| 250 - 495 | € 1,69 | € 8,45 |
| 500+ | € 1,57 | € 7,85 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
14 A
Maximum Drain Source Voltage
60 V
Tip pachet
TO-220FP
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
37 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Typical Gate Charge @ Vgs
25 nC @ 10 V
Inaltime
9.8mm
Temperatura minima de lucru
-55 °C
Tara de origine
China
Detalii produs


