Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
60 V
Tip pachet
TO-220FP
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
37 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.83mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Lungime
10.63mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Inaltime
16.12mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 2,55
Each (In a Tube of 50) (fara TVA)
€ 3,034
Each (In a Tube of 50) (cu TVA)
50
€ 2,55
Each (In a Tube of 50) (fara TVA)
€ 3,034
Each (In a Tube of 50) (cu TVA)
50
Cumpara in pachete mari
Cantitate | Pret unitar | Per Tub |
---|---|---|
50 - 50 | € 2,55 | € 127,50 |
100 - 200 | € 1,96 | € 98,00 |
250+ | € 1,74 | € 87,00 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
60 V
Tip pachet
TO-220FP
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
37 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.83mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Lungime
10.63mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Inaltime
16.12mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs