Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
200 V
Tip pachet
TO-220FP
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Transistor Material
Si
Typical Gate Charge @ Vgs
16 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,78
Each (In a Tube of 50) (fara TVA)
€ 2,118
Each (In a Tube of 50) (cu TVA)
50
€ 1,78
Each (In a Tube of 50) (fara TVA)
€ 2,118
Each (In a Tube of 50) (cu TVA)
50
Cumpara in pachete mari
Cantitate | Pret unitar | Per Tub |
---|---|---|
50 - 50 | € 1,78 | € 89,00 |
100 - 200 | € 1,62 | € 81,00 |
250+ | € 1,52 | € 76,00 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
200 V
Tip pachet
TO-220FP
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Transistor Material
Si
Typical Gate Charge @ Vgs
16 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs