Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
4.5 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-220FP
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
27 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.83mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Lungime
10.63mm
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
16.12mm
Tara de origine
China
Detalii produs
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,57
Each (In a Tube of 50) (fara TVA)
€ 0,678
Each (In a Tube of 50) (cu TVA)
50
€ 0,57
Each (In a Tube of 50) (fara TVA)
€ 0,678
Each (In a Tube of 50) (cu TVA)
50
Cumpara in pachete mari
Cantitate | Pret unitar | Per Tub |
---|---|---|
50 - 450 | € 0,57 | € 28,50 |
500 - 1200 | € 0,51 | € 25,50 |
1250 - 2450 | € 0,46 | € 23,00 |
2500 - 4950 | € 0,43 | € 21,50 |
5000+ | € 0,40 | € 20,00 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
4.5 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-220FP
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
27 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.83mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Lungime
10.63mm
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
16.12mm
Tara de origine
China
Detalii produs