Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
100 V
Tip pachet
HVMDIP
Montare
Through Hole
Numar pini
4
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
18 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Lungime
5mm
Latime
6.29mm
Transistor Material
Si
Inaltime
3.37mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
Philippines
Detalii produs
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
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Buc. (cu TVA)
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€ 1,87
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€ 2,23
Buc. (cu TVA)
1
Cumpara in pachete mari
Cantitate | Pret unitar |
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1 - 9 | € 1,87 |
10 - 49 | € 1,71 |
50 - 99 | € 1,64 |
100 - 249 | € 1,54 |
250+ | € 1,47 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
100 V
Tip pachet
HVMDIP
Montare
Through Hole
Numar pini
4
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
18 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Lungime
5mm
Latime
6.29mm
Transistor Material
Si
Inaltime
3.37mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
Philippines
Detalii produs