Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
1.6 A
Maximum Drain Source Voltage
60 V
Tip pachet
HVMDIP
Montare
Through Hole
Numar pini
4
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Lungime
6.29mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Inaltime
3.37mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
6.3V
Tara de origine
Philippines
Detalii produs
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,38
Each (In a Tube of 100) (fara TVA)
€ 1,642
Each (In a Tube of 100) (cu TVA)
100
€ 1,38
Each (In a Tube of 100) (fara TVA)
€ 1,642
Each (In a Tube of 100) (cu TVA)
100
Cumpara in pachete mari
Cantitate | Pret unitar | Per Tub |
---|---|---|
100 - 100 | € 1,38 | € 138,00 |
200 - 400 | € 1,31 | € 131,00 |
500+ | € 1,23 | € 123,00 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
1.6 A
Maximum Drain Source Voltage
60 V
Tip pachet
HVMDIP
Montare
Through Hole
Numar pini
4
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Lungime
6.29mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Inaltime
3.37mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
6.3V
Tara de origine
Philippines
Detalii produs