Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
600 V
Tip pachet
TO-220AB
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
2.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
74 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Latime
4.7mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
10.41mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Inaltime
9.01mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 2,81
Each (In a Tube of 50) (fara TVA)
€ 3,344
Each (In a Tube of 50) (cu TVA)
50
€ 2,81
Each (In a Tube of 50) (fara TVA)
€ 3,344
Each (In a Tube of 50) (cu TVA)
50
Cumpara in pachete mari
Cantitate | Pret unitar | Per Tub |
---|---|---|
50 - 50 | € 2,81 | € 140,50 |
100 - 200 | € 2,30 | € 115,00 |
250+ | € 2,15 | € 107,50 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
600 V
Tip pachet
TO-220AB
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
2.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
74 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Latime
4.7mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
10.41mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Inaltime
9.01mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs