Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
60 V
Tip pachet
TO-220AB
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
88 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Lungime
10.41mm
Typical Gate Charge @ Vgs
34 nC @ 10 V
Latime
4.7mm
Number of Elements per Chip
1
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
9.01mm
Tara de origine
China
Detalii produs
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,98
Each (In a Tube of 50) (fara TVA)
€ 2,356
Each (In a Tube of 50) (cu TVA)
50
€ 1,98
Each (In a Tube of 50) (fara TVA)
€ 2,356
Each (In a Tube of 50) (cu TVA)
50
Cumpara in pachete mari
Cantitate | Pret unitar | Per Tub |
---|---|---|
50 - 50 | € 1,98 | € 99,00 |
100 - 200 | € 1,81 | € 90,50 |
250+ | € 1,70 | € 85,00 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
60 V
Tip pachet
TO-220AB
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
88 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Lungime
10.41mm
Typical Gate Charge @ Vgs
34 nC @ 10 V
Latime
4.7mm
Number of Elements per Chip
1
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
9.01mm
Tara de origine
China
Detalii produs