Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
6.8 A
Maximum Drain Source Voltage
200 V
Tip pachet
D2PAK (TO-263)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
9.65mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
10.67mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Inaltime
4.83mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,77
Buc. (Pe o rola de 800) (fara TVA)
€ 0,916
Buc. (Pe o rola de 800) (cu TVA)
800
€ 0,77
Buc. (Pe o rola de 800) (fara TVA)
€ 0,916
Buc. (Pe o rola de 800) (cu TVA)
800
Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
6.8 A
Maximum Drain Source Voltage
200 V
Tip pachet
D2PAK (TO-263)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
9.65mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
10.67mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Inaltime
4.83mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs