Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
6.8 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-220AB
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
18 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.41mm
Latime
4.7mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
9.01mm
Tara de origine
China
Detalii produs
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,75
Each (Supplied in a Tube) (fara TVA)
€ 2,082
Each (Supplied in a Tube) (cu TVA)
10
€ 1,75
Each (Supplied in a Tube) (fara TVA)
€ 2,082
Each (Supplied in a Tube) (cu TVA)
10
Cumpara in pachete mari
Cantitate | Pret unitar | Per Tub |
---|---|---|
10 - 40 | € 1,75 | € 17,50 |
50 - 90 | € 1,65 | € 16,50 |
100 - 240 | € 1,43 | € 14,30 |
250 - 490 | € 1,36 | € 13,60 |
500+ | € 1,11 | € 11,10 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
6.8 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-220AB
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
18 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.41mm
Latime
4.7mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
9.01mm
Tara de origine
China
Detalii produs