Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
500 V
Tip pachet
D2PAK (TO-263)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
10.67mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Latime
9.65mm
Temperatura minima de lucru
-55 °C
Inaltime
4.83mm
Detalii produs
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,67
Each (In a Tube of 50) (fara TVA)
€ 0,797
Each (In a Tube of 50) (cu TVA)
50
€ 0,67
Each (In a Tube of 50) (fara TVA)
€ 0,797
Each (In a Tube of 50) (cu TVA)
50
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
500 V
Tip pachet
D2PAK (TO-263)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
10.67mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Latime
9.65mm
Temperatura minima de lucru
-55 °C
Inaltime
4.83mm
Detalii produs