Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-220AB
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
77 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
72 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.41mm
Latime
4.7mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
9.01mm
Tara de origine
China
Detalii produs
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 3,17
Buc. (Intr-un pachet de 5) (fara TVA)
€ 3,772
Buc. (Intr-un pachet de 5) (cu TVA)
5
€ 3,17
Buc. (Intr-un pachet de 5) (fara TVA)
€ 3,772
Buc. (Intr-un pachet de 5) (cu TVA)
5
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 45 | € 3,17 | € 15,85 |
50 - 120 | € 2,62 | € 13,10 |
125 - 245 | € 2,45 | € 12,25 |
250 - 495 | € 2,28 | € 11,40 |
500+ | € 1,84 | € 9,20 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-220AB
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
77 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
72 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.41mm
Latime
4.7mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
9.01mm
Tara de origine
China
Detalii produs