Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-220AB
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
77 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
72 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.41mm
Latime
4.7mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
9.01mm
Tara de origine
China
Detalii produs
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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P.O.A.
5
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-220AB
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
77 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
72 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.41mm
Latime
4.7mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
9.01mm
Tara de origine
China
Detalii produs