Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
5.6 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-220AB
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
43 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.41mm
Latime
4.7mm
Transistor Material
Si
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
9.01mm
Detalii produs
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,46
Each (Supplied in a Tube) (fara TVA)
€ 1,737
Each (Supplied in a Tube) (cu TVA)
10
€ 1,46
Each (Supplied in a Tube) (fara TVA)
€ 1,737
Each (Supplied in a Tube) (cu TVA)
10
Cumpara in pachete mari
Cantitate | Pret unitar | Per Tub |
---|---|---|
10 - 90 | € 1,46 | € 14,60 |
100 - 240 | € 1,05 | € 10,50 |
250 - 490 | € 0,86 | € 8,60 |
500 - 990 | € 0,76 | € 7,60 |
1000+ | € 0,55 | € 5,50 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
5.6 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-220AB
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
43 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.41mm
Latime
4.7mm
Transistor Material
Si
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
9.01mm
Detalii produs