Documente tehnice
Specificatii
Marca
VishaySpectrums Detected
Infrared, Visible Light
Timp de scadere tipic
2.3µs
Timp de crestere tipic
2µs
Number of Channels
1
Maximum Light Current
15000µA
Maximum Dark Current
200nA
Angle of Half Sensitivity
40 °
Polarity
NPN
Number of Pins
2
Timp montare
Through Hole
Tip pachet
5mm (T-1 3/4)
Dimensiuni
5.75 x 5.75 x 8.6mm
Collector Current
50mA
Maximum Wavelength Detected
1080nm
Spectral Range of Sensitivity
450 → 1080 nm
Minimum Wavelength Detected
450nm
Lungime
5.75mm
Latime
5.75mm
Inaltime
8.6mm
Detalii produs
BPW96B and BPW96C Series Phototransistors
Vishay Semiconductor's BPW96B and BPW96C series are a family of silicon NPN phototransistors. They are in 5mm (T-1 3/4) through-hole packages with a clear plastic lens. This enables the BPW96B and BPW96C phototransistors to be sensitive to visible and near IR radiation. Suitable applications for these transistors include detectors in electronic control and drive circuits.
IR Phototransistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,43
Buc. (Intr-o punga de 1000) (fara TVA)
€ 0,512
Buc. (Intr-o punga de 1000) (cu TVA)
1000
€ 0,43
Buc. (Intr-o punga de 1000) (fara TVA)
€ 0,512
Buc. (Intr-o punga de 1000) (cu TVA)
1000
Documente tehnice
Specificatii
Marca
VishaySpectrums Detected
Infrared, Visible Light
Timp de scadere tipic
2.3µs
Timp de crestere tipic
2µs
Number of Channels
1
Maximum Light Current
15000µA
Maximum Dark Current
200nA
Angle of Half Sensitivity
40 °
Polarity
NPN
Number of Pins
2
Timp montare
Through Hole
Tip pachet
5mm (T-1 3/4)
Dimensiuni
5.75 x 5.75 x 8.6mm
Collector Current
50mA
Maximum Wavelength Detected
1080nm
Spectral Range of Sensitivity
450 → 1080 nm
Minimum Wavelength Detected
450nm
Lungime
5.75mm
Latime
5.75mm
Inaltime
8.6mm
Detalii produs
BPW96B and BPW96C Series Phototransistors
Vishay Semiconductor's BPW96B and BPW96C series are a family of silicon NPN phototransistors. They are in 5mm (T-1 3/4) through-hole packages with a clear plastic lens. This enables the BPW96B and BPW96C phototransistors to be sensitive to visible and near IR radiation. Suitable applications for these transistors include detectors in electronic control and drive circuits.