Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayProduct Type
Optocoupler
Montare
Surface, Through Hole
Maximum Forward Voltage
1.7V
Number of Channels
2
Number of Pins
6
Tip pachet
Surface Mount
Curent de intrare
DC
Timp de crestere tipic
10μs
Maximum Input Current
60mA
Isolation Voltage
5000Vrms
Temperatura minima de lucru
-55°C
Maximum Current Transfer Ratio
50%
Temperatura maxima de lucru
100°C
Minimum Current Transfer Ratio
20%
Timp de scadere tipic
10μs
Standards/Approvals
BSI, FIMKO, EN 60950-1, UL, cUL, WEEE, RoHS, DIN EN 60747-5-5, DIN EN 60747-5-2, EN 60065, CQC
Series
4N35
Automotive Standard
No
Tara de origine
China
Detalii produs
Optocoupler, Transistor Output, 4Nxx Series, Vishay Semiconductor
Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor.
Optocouplers, Vishay Semiconductor
Informatii despre stoc temporar indisponibile
€ 260,00
€ 0,26 Buc. (Pe o rola de 1000) (fara TVA)
€ 314,60
€ 0,315 Buc. (Pe o rola de 1000) (cu TVA)
1000
€ 260,00
€ 0,26 Buc. (Pe o rola de 1000) (fara TVA)
€ 314,60
€ 0,315 Buc. (Pe o rola de 1000) (cu TVA)
Informatii despre stoc temporar indisponibile
1000
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayProduct Type
Optocoupler
Montare
Surface, Through Hole
Maximum Forward Voltage
1.7V
Number of Channels
2
Number of Pins
6
Tip pachet
Surface Mount
Curent de intrare
DC
Timp de crestere tipic
10μs
Maximum Input Current
60mA
Isolation Voltage
5000Vrms
Temperatura minima de lucru
-55°C
Maximum Current Transfer Ratio
50%
Temperatura maxima de lucru
100°C
Minimum Current Transfer Ratio
20%
Timp de scadere tipic
10μs
Standards/Approvals
BSI, FIMKO, EN 60950-1, UL, cUL, WEEE, RoHS, DIN EN 60747-5-5, DIN EN 60747-5-2, EN 60065, CQC
Series
4N35
Automotive Standard
No
Tara de origine
China
Detalii produs
Optocoupler, Transistor Output, 4Nxx Series, Vishay Semiconductor
Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor.
