Documente tehnice
Specificatii
Marca
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
30 V
Dimensiune celula
TrenchFET
Tip pachet
PowerPAIR 3 x 3
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
16.7 W
Maximum Gate Source Voltage
-12 V, +16 V
Latime
3mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
3mm
Typical Gate Charge @ Vgs
13.5 nC @ 10 V
Inaltime
0.75mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
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Buc. (Pe o rola de 3000) (fara TVA)
€ 0,512
Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 0,43
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,512
Buc. (Pe o rola de 3000) (cu TVA)
3000
Documente tehnice
Specificatii
Marca
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
30 V
Dimensiune celula
TrenchFET
Tip pachet
PowerPAIR 3 x 3
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
16.7 W
Maximum Gate Source Voltage
-12 V, +16 V
Latime
3mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
3mm
Typical Gate Charge @ Vgs
13.5 nC @ 10 V
Inaltime
0.75mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V