Documente tehnice
Specificatii
Marca
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
60 V
Serie
TrenchFET
Tip pachet
1212
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
4V
Maximum Power Dissipation
24 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
3.15mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
3.15mm
Typical Gate Charge @ Vgs
8.9 nC @ 10 V
Inaltime
1.07mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Tara de origine
China
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P.O.A.
3000
P.O.A.
3000
Documente tehnice
Specificatii
Marca
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
60 V
Serie
TrenchFET
Tip pachet
1212
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
4V
Maximum Power Dissipation
24 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
3.15mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
3.15mm
Typical Gate Charge @ Vgs
8.9 nC @ 10 V
Inaltime
1.07mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Tara de origine
China