Documente tehnice
Specificatii
Marca
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
100 V
Tip pachet
SC-70
Dimensiune celula
TrenchFET
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
19 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
2.2mm
Typical Gate Charge @ Vgs
8.5 nC @ 10 V
Latime
1.35mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Inaltime
1mm
Temperatura minima de lucru
-55 °C
Tara de origine
China
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P.O.A.
3000
P.O.A.
3000
Documente tehnice
Specificatii
Marca
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
100 V
Tip pachet
SC-70
Dimensiune celula
TrenchFET
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
19 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
2.2mm
Typical Gate Charge @ Vgs
8.5 nC @ 10 V
Latime
1.35mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Inaltime
1mm
Temperatura minima de lucru
-55 °C
Tara de origine
China