Documente tehnice
Specificatii
Marca
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
17.2 A
Maximum Drain Source Voltage
200 V
Tip pachet
PowerPAK SO-8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
52 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Transistor Material
Si
Lungime
5.99mm
Typical Gate Charge @ Vgs
19.5 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Latime
5mm
Dimensiune celula
TrenchFET
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.1V
Inaltime
1.07mm
Tara de origine
China
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P.O.A.
3000
P.O.A.
3000
Documente tehnice
Specificatii
Marca
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
17.2 A
Maximum Drain Source Voltage
200 V
Tip pachet
PowerPAK SO-8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
52 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Transistor Material
Si
Lungime
5.99mm
Typical Gate Charge @ Vgs
19.5 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Latime
5mm
Dimensiune celula
TrenchFET
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.1V
Inaltime
1.07mm
Tara de origine
China