Documente tehnice
Specificatii
Marca
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
40 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Typical Gate Charge @ Vgs
12.5 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
3.04mm
Latime
1.4mm
Number of Elements per Chip
1
Dimensiune celula
TrenchFET
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
1.02mm
Tara de origine
China
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
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Buc. (Pe o rola de 3000) (fara TVA)
€ 0,19
Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 0,16
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,19
Buc. (Pe o rola de 3000) (cu TVA)
3000
Documente tehnice
Specificatii
Marca
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
40 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Typical Gate Charge @ Vgs
12.5 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
3.04mm
Latime
1.4mm
Number of Elements per Chip
1
Dimensiune celula
TrenchFET
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
1.02mm
Tara de origine
China