Documente tehnice
Specificatii
Marca
ToshibaTransistor Type
PNP
Maximum Continuous Collector Current
7 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
6 V
Tip pachet
TO-220SIS
Montare
Through Hole
Numar pini
3
Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
2 V
Maximum Collector Base Voltage
120 V
Maximum Collector Emitter Saturation Voltage
2 V
Maximum Collector Cut-off Current
2µA
Inaltime
15mm
Latime
4.5mm
Maximum Power Dissipation
25 W @ 25 °C
Dimensiuni
10 x 4.5 x 15mm
Temperatura maxima de lucru
+150 °C
Lungime
100mm
Base Current
0.7A
Tara de origine
Japan
Detalii produs
NPN Darlington Transistors, Toshiba
Bipolar Transistors, Toshiba
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,66
Buc. (Intr-un pachet de 10) (fara TVA)
€ 0,785
Buc. (Intr-un pachet de 10) (cu TVA)
10
€ 0,66
Buc. (Intr-un pachet de 10) (fara TVA)
€ 0,785
Buc. (Intr-un pachet de 10) (cu TVA)
10
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 20 | € 0,66 | € 6,60 |
30+ | € 0,56 | € 5,60 |
Documente tehnice
Specificatii
Marca
ToshibaTransistor Type
PNP
Maximum Continuous Collector Current
7 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
6 V
Tip pachet
TO-220SIS
Montare
Through Hole
Numar pini
3
Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
2 V
Maximum Collector Base Voltage
120 V
Maximum Collector Emitter Saturation Voltage
2 V
Maximum Collector Cut-off Current
2µA
Inaltime
15mm
Latime
4.5mm
Maximum Power Dissipation
25 W @ 25 °C
Dimensiuni
10 x 4.5 x 15mm
Temperatura maxima de lucru
+150 °C
Lungime
100mm
Base Current
0.7A
Tara de origine
Japan
Detalii produs